Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2295 Datenblatt(PDF) 1 Page - Panasonic Semiconductor |
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2SC2295 Datenblatt(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor Marking symbol : E 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 s Features q High transition frequency fT. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –30 –20 –5 –30 200 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance Symbol ICBO ICEO IEBO hFE * VCE(sat) VBE fT NF Zrb Cre Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 1mA, f = 5MHz VCB = –10V, IE = 1mA, f = 2MHz VCE = –10V, IC = –1mA f = 10.7MHz min 70 150 typ – 0.1 – 0.7 300 2.8 22 1.2 max – 0.1 –100 –10 220 Unit µA µA µA V V MHz dB Ω pF *h FE Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Marking Symbol EB EC |
Ähnliche Teilenummer - 2SC2295 |
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Ähnliche Beschreibung - 2SC2295 |
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