Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1264A Datenblatt(PDF) 1 Page - Panasonic Semiconductor |
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2SD1264A Datenblatt(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A s Features q High collector to emitter voltage VCEO q Large collector power dissipation PC q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –200 –200 –150 –180 –6 –3 –2 30 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SB940 2SB940A 2SB940 2SB940A TC=25°C Ta=25 °C *h FE1 Rank classification Rank Q P hFE1 60 to 140 100 to 240 s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Symbol ICBO IEBO VCBO VCEO VEBO hFE1 * hFE2 VBE VCE(sat) fT Conditions VCB = –200V, IE = 0 VEB = –4V, IC = 0 IC = –50µA, IE = 0 IC = –5mA, IB = 0 IE = –500µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –400mA VCE = –10V, IC = –400mA IC = –500mA, IB = –50mA VCE = –10V, IC = – 0.5A, f = 10MHz min –200 –150 –180 –6 60 50 typ 30 max –50 –50 240 –1 –1 Unit µA µA V V V V V MHz 2SB940 2SB940A Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 |
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