Datenblatt-Suchmaschine für elektronische Bauteile |
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PD10M441L Datenblatt(PDF) 4 Page - Nihon Inter Electronics Corporation |
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PD10M441L Datenblatt(HTML) 4 Page - Nihon Inter Electronics Corporation |
4 / 4 page PD10M440L/441L,P2H10M440L/441L . . . 3 10 30 100 200 2 10 30 100 300 1000 Drain Current ID (A) Fig.7- Drain Current vs. Switching Time (Typical) td(off) tf tr td(on) VDD=250V RG=7Ω TC=25℃ 80μs Pulse Test 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 20 40 60 80 100 120 Source to Drain Voltage VSD (V) Fig.8- Source to Drain Diode Forward Characteristics (Typical) T J=125℃ T J=25℃ 250μs PULSE TEST 0 100 200 300 400 500 600 20 50 100 200 500 1000 2000 -dis/dt (A/μs) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr …IS=40A ― IS=70A TJ=150℃ 1 3 10 30 100 300 1000 0.5 1 2 5 10 20 50 100 200 500 Drain to Source Voltage V DS (V) Fig.10- Maximum Safe Operating Area TC=25℃ Tj=150℃MAX Single Pulse 10μs 100μs Operation in this area is limited by R DS(on) 1ms DC 10ms 440L 441L 10-5 10-4 10-3 10-2 10-1 1101 1x10-2 3x10-2 1x10-1 3x10-1 1 3 1x101 PULSE DURATION t (s) Fig.11- Normalized Transient Thermal Impedance (MOSFET) Per Unit Base R th(j-c)= 0.25℃/W 1 Shot Pulse |
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