2SC4960 datasheet(1/3 Pages) PANASONIC

Teilenummer	2SC4960

Bauteilbeschribung	Silicon NPN triple diffusion planar type(For power switching)

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Hersteller	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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1

Power Transistors

2SC4960, 2SC4960A

Silicon NPN triple diffusion planar type

For power switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Satisfactory linearity of foward current transfer ratio hFE

q

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to

base voltage

Collector to emitter voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

900

800

900

7

2

1

0.3

40

3

150

–55 to +150

Unit

V

A

W

˚C

2SC4960

2SC4960A

2SC4960

2SC4960A

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter

voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 900V, IE = 0

VEB = 7V, IC = 0

IC = 1mA, IB = 0

VCE = 5V, IC = 0.05A

VCE = 5V, IC = 0.5A

IC = 0.2A, IB = 0.04A

VCE = 10V, IC = 0.05A, f = 1MHz

IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,

VCC = 250V

min

800

900

6

3

typ

4

max

50

1.5

1

3

1

Unit

µA

V

MHz

µs

2SC4960

2SC4960A

Unit: mm

1:Base

2:Collector

3:Emitter

TOP–3 Full Pack Package(a)

15.0

±0.3

5.0

±0.2

11.0

±0.2

10.9

±0.5

5.45

±0.3

3

2

1

1.1

±0.1

2.0

±0.2

0.6

±0.2

2.0

±0.1

φ3.2±0.1

3.2

Ähnliche Beschreibung - 2SC4960

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