Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1250 Datenblatt(PDF) 2 Page - Panasonic Semiconductor |
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2SD1250 Datenblatt(HTML) 2 Page - Panasonic Semiconductor |
2 / 2 page 2 Power Transistors 2SD1250, 2SD1250A PC —Ta IC —VCE IC —VBE VCE(sat) —IC hFE —IC fT —IC Area of safe operation (ASO) Rth(t) —t 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) T C=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (P C=1.3W) (1) (2) (3) Ambient temperature Ta (˚C) 024 20 16 412 8 0 1.2 1.0 0.8 0.6 0.4 0.2 I B=7mA 6mA 5mA 4mA 3mA 2mA 1mA T C=25˚C Collector to emitter voltage V CE (V) 01.2 1.0 0.8 0.2 0.6 0.4 0 1.2 1.0 0.8 0.6 0.4 0.2 T C=100˚C 25˚C –25˚C Base to emitter voltage V BE (V) 0.01 0.1 1 0.03 0.3 0.01 10 1 0.1 0.03 0.3 3 I C/IB=10 T C=100˚C 25˚C –25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 V CE=10V 25˚C –25˚C T C=100˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 V CE=10V f=1MHz T C=25˚C Collector current I C (A) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 Non repetitive pulse T C=25˚C I CP I C 5ms 1ms 1s t=0.5ms Collector to emitter voltage V CE (V) 10–4 10 10–3 10–1 10–2 1103 102 104 10–2 10–1 1 10 103 102 (1) (2) (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink Time t (s) |
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