2SD1260A datasheet(2/2 Pages) PANASONIC

Teilenummer	2SD1260A

Bauteilbeschribung	Silicon NPN triple diffusion planar type Darlington(For power amplification)

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Hersteller	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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2

Power Transistors

2SD1260, 2SD1260A

PC —Ta

IC —VCE

IC —VBE

VCE(sat) —IC

hFE —IC

Cob —VCB

Area of safe operation (ASO)

Rth(t) —t

0

160

40

120

80

140

20

100

60

0

40

30

10

25

35

20

5

15

(1) T

C=Ta

(2) With a 50

× 50 × 2mm

Al heat sink

(3) Without heat sink

(P

C=1.3W)

(1)

(3)

(2)

Ambient temperature Ta (˚C)

06

5

4

13

2

0

5

4

3

2

1

T

C=25˚C

I

B=2.0mA

0.2mA

0.4mA

0.6mA

0.8mA

1.0mA

1.2mA

1.4mA

1.6mA

1.8mA

Collector to emitter voltage V

CE

(V)

03.2

0.8

2.4

1.6

0

10

8

6

4

2

V

CE=4V

T

C=100˚C

–25˚C

25˚C

Base to emitter voltage V

BE

(V)

0.01

0.1

1

10

0.03

0.3

3

0.01

0.03

0.1

0.3

1

3

10

30

100

I

C/IB=250

100˚C

25˚C

T

C=–25˚C

Collector current I

C

(A)

0.01

0.1

1

10

0.03

0.3

3

10

102

103

104

105

V

CE=4V

25˚C

–25˚C

T

C=100˚C

Collector current I

C

(A)

0.1

1

10

100

0.3

3

30

1

3

10

30

100

300

1000

3000

10000

I

E=0

f=1MHz

T

C=25˚C

Collector to base voltage V

CB

(V)

1

10

100

1000

3

30

300

0.01

0.03

0.1

0.3

1

3

10

30

100

Non repetitive pulse

T

C=25˚C

I

CP

I

C

t=10ms

1ms

300ms

Collector to emitter voltage V

CE

(V)

10–4

10

10–3

10–1

10–2

1103

102

104

10–2

10–1

1

10

103

102

(1) Without heat sink

(2) With a 50

× 50 × 2mm Al heat sink

(1)

(2)

Time t (s)

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