2SD973 datasheet(2/3 Pages) PANASONIC

Teilenummer	2SD973

Bauteilbeschribung	Silicon NPN epitaxial planer type(For low-frequency power amplification)

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Hersteller	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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2 / 3 page

2

Transistor

2SD973, 2SD973A

PC — Ta

IC — VCE

IC — IB

VCE(sat) — IC

VBE(sat) — IC

hFE — IC

fT — IE

Cob — VCB

VCER — RBE

0

160

40

120

80

140

20

100

60

0

1.4

1.2

0.4

1.0

0.8

0.2

0.6

Printed circut board: Copper

foil area of 1cm2 or more, and

the board thickness of 1.7mm

for the collector portion.

Ambient temperature Ta (˚C)

010

8

26

4

0

1.50

1.25

1.00

0.75

0.50

0.25

Ta=25˚C

I

B=10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage V

CE

(V)

012

10

8

26

4

0

1.2

1.0

0.8

0.6

0.4

0.2

V

CE=10V

Ta=25˚C

Base current I

B

(mA)

0.01

0.1

1

10

0.03

0.3

3

0.001

0.003

0.01

0.03

0.1

0.3

1

3

10

I

C/IB=10

Ta=75˚C

25˚C

–25˚C

Collector current I

C

(A)

0.01

0.1

1

10

0.03

0.3

3

0.01

0.03

0.1

0.3

1

3

10

30

100

I

C/IB=10

Ta=–25˚C

25˚C

75˚C

Collector current I

C

(A)

0.01

0.1

1

10

0.03

0.3

3

0

600

500

400

300

200

100

Ta=75˚C

25˚C

–25˚C

V

CE=10

Collector current I

C

(A)

–1

–3

–10

–30

–100

0

200

160

120

80

40

V

CB=10V

Ta=25˚C

Emitter current I

E

(mA)

1

3

10

30

100

0

50

40

30

20

10

I

E=0

f=1MHz

Ta=25˚C

Collector to base voltage V

CB

(V)

0.1

1

10

100

0.3

3

30

0

120

100

80

60

40

20

I

C=10mA

Ta=25˚C

2SD973A

2SD973

Base to emitter resistance R

BE

(k

Ω)

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