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N08T1630C1BZ-55 Datenblatt(PDF) 4 Page - NanoAmp Solutions, Inc.

Teilenummer N08T1630C1BZ-55
Bauteilbeschribung  8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
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Hersteller  NANOAMP [NanoAmp Solutions, Inc.]
Direct Link  http://www.nanoamp.com
Logo NANOAMP - NanoAmp Solutions, Inc.

N08T1630C1BZ-55 Datenblatt(HTML) 4 Page - NanoAmp Solutions, Inc.

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(DOC# 14-02-004 REV H ECN# 01-1102)
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
Timing
Item
Symbol
-55
-70
Units
Min.
Max.
Min.
Max.
Read Cycle Time
tRC
55
70
ns
Address Access Time
tAA
55
70
ns
Chip Enable to Valid Output
tCO
55
70
ns
Output Enable to Valid Output
tOE
30
35
ns
Byte Select to Valid Output
tLB, tUB
55
70
ns
Chip Enable to Low-Z output
tLZ
55
ns
Output Enable to Low-Z Output
tOLZ
55
ns
Byte Select to Low-Z Output
tBLZ
55
ns
Chip Disable to High-Z Output
tHZ
0200
25
ns
Output Disable to High-Z Output
tOHZ
0200
25
ns
Byte Select Disable to High-Z Output
tBHZ
0200
25
ns
Output Hold from Address Change
tOH
10
10
ns
Write Cycle Time
tWC
55
70
ns
Chip Enable to End of Write
tCW
45
55
ns
Address Valid to End of Write
tAW
45
55
ns
Byte Select to End of Write
tBW
45
55
ns
Write Pulse Width
tWP
45
55
ns
Address Setup Time
tAS
00
ns
Write Recovery Time
tWR
00
ns
Write to High-Z Output
tWHZ
25
25
ns
Data to Write Time Overlap
tDW
40
40
ns
Data Hold from Write Time
tDH
00
ns
End Write to Low-Z Output
tOW
55
ns


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