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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4190, REV. -
LOW RDS HERMETIC POWER MOSFET - P-CHANNEL
FEATURES:
• 60 Volt, 0.015 Ohm, 50A MOSFET
• Isolated Hermetic Metal Package
• Ultra Low R
DS (on)
• Characterized at V
GS of 4.5V
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25
°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
ID25
-
-
- 50
Amps
PULSED DRAIN CURRENT
IDM
-
-
- 80
Amps
OPERATING AND STORAGE TEMPERATURE
TJ/TSTG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION
PD
-
-
270
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
RθJC
-
-
0.50
°C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = - 250µA
BVDSS
-60
-
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = - 10V, ID = - 17A
VGS = - 4.5V, ID = - 14A
-
-
-
0.012
0.016
0.015
0.020
Ω
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = - 250µA
VGS(th)
- 1
-
- 3
Volts
FORWARD TRANSCONDUCTANCE
VDS = - 15V, ID = - 17A
gfs
-
61
-
S(1/
Ω)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C
TJ = 125°C
IDSS
-
-
- 1
- 50
µA
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
IGSS
-
-
100
-100
nA
TURN ON DELAY TIME
VDD = - 30V
RISE TIME
ID = - 50A
TURN OFF DELAY TIME
VGS= - 10V
FALL TIME
RG = 6Ω
td(ON)
tr
td(OFF)
tf
-
15
70
175
175
23
105
260
260
nsec
DIODE FORWARD VOLTAGE
IF = - 50A, VGS = 0V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
VSD
-
1.0
1.6
Volts
REVERSE RECOVERY TIME
TJ = 25°C,
IF= - 50A, VR = 100V
di/dt = 100A/
µsec
trr
-
45
70
nsec
INPUT CAPACITANCE
VGS = 0 V,
OUTPUT CAPACITANCE
VDS = - 25 V,
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
Ciss
Coss
Crss
-
4950
480
405
-
pF
SHD244702