Datenblatt-Suchmaschine für elektronische Bauteile |
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1PS79SB40 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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1PS79SB40 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 26 2 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES • Low forward voltage • Guard ring protected • Ultra small SMD package • Low diode capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in an SC-79 (SOD523) ultra small plastic SMD package. Fig.1 Simplified outline SC-79 (SOD523) and symbol. Marking code: T. The marking bar indicates the cathode. handbook, halfpage ka Top view MAM403 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 40 V IF continuous forward current − 120 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 120 mA IFSM non-repetitive peak forward current tp <10ms − 200 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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