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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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1PS89SB74 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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1PS89SB74 Datenblatt(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2001 Apr 20 3 Philips Semiconductors Product specification Schottky barrier double diode 1PS89SB74 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT490 (SC-89) standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF continuous forward voltage see Fig.2; IF = 1 mA 410 mV IF = 10 mA 750 mV IF =15mA 1 V IR continuous reverse current VR = 50 V; see Fig.3; note 1 100 nA VR = 70 V; see Fig.3; note 1 10 µA Cd diode capacitance VR = 0; f = 1 MHz; see Fig.4 2 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
Ähnliche Teilenummer - 1PS89SB74 |
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Ähnliche Beschreibung - 1PS89SB74 |
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