Datenblatt-Suchmaschine für elektronische Bauteile |
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2N2484 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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2N2484 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 May 01 3 Philips Semiconductors Product specification NPN general purpose transistor 2N2484 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 60 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 50 mA ICM peak collector current − 100 mA IBM peak base current − 50 mA Ptot total power dissipation Tamb ≤ 25 °C − 360 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient 480 K/W Rth j-c thermal resistance from junction to case 150 K/W |
Ähnliche Teilenummer - 2N2484 |
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Ähnliche Beschreibung - 2N2484 |
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