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H02N60SF Datenblatt(PDF) 2 Page - Hi-Sincerity Mocroelectronics |
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H02N60SF Datenblatt(HTML) 2 Page - Hi-Sincerity Mocroelectronics |
2 / 6 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 2/6 H02N60SI, H02N60SJ, H02N60SE, H02N60SF HSMC Product Specification Thermal Characteristics Symbol Parameter Value Units TO-251 / TO-252 2 TO-220AB 2 RθJC Thermal Resistance Junction to Case Max. TO-220FP 3.3 °C/W RθJA Thermal Resistance Junction to Ambient Max. 62.5 °C/W ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Characteristic Min. Typ. Max. Unit V (BR)DSS Drain-Source Breakdown Voltage (V GS=0V, ID=250uA) 600 - - V Drain-Source Leakage Current (V DS=600V, VGS=0V) - - 1 uA I DSS Drain-Source Leakage Current (V DS=480V, VGS=0V, Tj=125°C) - - 50 uA I GSSF Gate-Source Leakage Current-Forward (V gsf=30V, VDS=0V) - - 100 nA I GSSR Gate-Source Leakage Current-Reverse (V gsr=-30V, VDS=0V) - - -100 nA V GS(th) Gate Threshold Voltage (V DS=VGS, ID=250uA) 2 - 4 V R DS(on) Static Drain-Source On-Resistance (V GS=10V, ID=1A)* - - 5 Ω g FS Forward Transconductance (V DS≥50V, ID=1A)* 1 - - mhos C iss Input Capacitance - 435 - C oss Output Capacitance - 56 - C rss Reverse Transfer Capacitance V GS=0V, VDS=25V, f=1MHz -9.2 - pF t d(on) Turn-on Delay Time - 12 - t r Rise Time - 21 - t d(off) Turn-off Delay Time - 30 - t f Fall Time (V DD=300V, ID=2A, RG=18Ω, V GS=10V)* -24 - ns Q g Total Gate Charge - 13 22 Q gs Gate-Source Charge - 2 - Q gd Gate-Drain Charge (V DS=300V, ID=6A, VGS=10V)* -6 - nC L D Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) -4.5 - nH L S Internal Drain Inductance (Measured from the drain lead 0.25” from package to source bond pad) -7.5 - nH *: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Source-Drain Diode Symbol Characteristic Min. Typ. Max. Units V SD Forward On Voltage(1) I S=2A, VGS=0V, TJ=25 oC- - 1.6 V t on Forward Turn-On Time - ** - ns t rr Reverse Recovery Time I S=2A, VGS=0V, dIS/dt=100A/us - 340 - ns **: Negligible, Dominated by circuit inductance |
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