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74AHCT30PW Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer 74AHCT30PW
Bauteilbeschribung  8-input NAND gate
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHCT30PW Datenblatt(HTML) 5 Page - NXP Semiconductors

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1999 Nov 30
5
Philips Semiconductors
Product specification
8-input NAND gate
74AHC30; 74AHCT30
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO-packages: above 70
°C the value of PD derates linearly with 8 mW/K.
For TSSOP-packages: above 60
°C the value of PD derates linearly with 5.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74AHC
74AHCT
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
DC supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
VI
input voltage
0
5.5
0
5.5
V
VO
output voltage
0
VCC
0
VCC
V
Tamb
operating ambient
temperature
see DC and AC
characteristics per device
−40
+25
+85
−40
+25
+85
°C
−40
+25
+125
−40
+25
+125
°C
tr,tf (∆t/∆f) input rise and fall rates
VCC = 3.3 ±0.3 V
−−
100
−−−
ns/V
VCC =5 ±0.5 V
−−
20
−−
20
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
DC supply voltage
−0.5
+7.0
V
VI
input voltage
−0.5
+7.0
V
IIK
DC input diode current
VI < −0.5 V; note 1
−−20
mA
IOK
DC output diode current
VO < −0.5 V or VO >VCC + 0.5 V; note 1
−±20
mA
IO
DC output source or sink current
−0.5V<VO <VCC + 0.5 V
−±25
mA
ICC
DC VCC or GND current
−±75
mA
Tstg
storage temperature
−65
+150
°C
PD
power dissipation per package
for temperature range from
−40 to +125 °C; note 2
500
mW


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