Datenblatt-Suchmaschine für elektronische Bauteile |
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SPI10N10L Datenblatt(PDF) 3 Page - Infineon Technologies AG |
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SPI10N10L Datenblatt(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 200 5-02-14 Rev. 2.1 Page 3 SPI10N10L SPP10N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max, ID=8.1A 4.7 9.4 - S Input capacitance Ciss VGS=0V, VDS=25V, f =1MHz - 355 444 pF Output capacitance Coss - 72 90 Reverse transfer capacitance Crss - 42 63 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=10.3A, RG=13 - 4.6 6.9 ns Rise time tr - 19.1 28.7 Turn-off delay time td(off) - 27.8 41.7 Fall time tf - 17.8 26.7 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=10.3A - 1.1 1.4 nC Gate to drain charge Qgd - 7.3 11 Gate charge total Qg VDD=80V, ID=10.3A, VGS=0 to 10V - 17.7 22 Gate plateau voltage V(plateau) VDD=80V, ID=10.3A - 3.8 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 10.3 A Inv. diode direct current, pulsed ISM - - 42.2 Inverse diode forward voltage VSD VGS=0V, IF=10.3A - 0.93 1.25 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 57 71 ns Reverse recovery charge Qrr - 126 158 nC |
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Ähnliche Beschreibung - SPI10N10L |
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