SPI80N06S-08 datasheet(2/8 Pages) INFINEON

Teilenummer	SPI80N06S-08

Bauteilbeschribung	SIPMOS짰 Power-Transistor

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Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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SPB80N06S-08

SPI80N06S-08, SPP80N06S-08

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

2)

Thermal resistance, junction - case

R thJC

-

0.38

0.5

K/W

Thermal resistance, junction -

ambient, leaded

R thJA

--

62

SMD version, device on PCB

R thJA

minimal footprint

-

62

6 cm2 cooling area

3)

--

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

55

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=240 µA

2.1

3.0

4

Zero gate voltage drain current

I DSS

V DS=25 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=25 V, V GS=0 V,

T j=150 °C

2)

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=80 A

-

6.5

8

m

Ω

V GS=10 V, I D=80 A

SMD version

-

6.2

7.7

Transconductance

2)

g fs

|V DS|>2|I D|R DS(on)max,

I D=80 A

-73

-

S

footnote on page 3

Values

Rev. 1.0

page 2

2004-11-30

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