Datenblatt-Suchmaschine für elektronische Bauteile |
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CD2320-B11000 Datenblatt(PDF) 1 Page - Bourns Electronic Solutions |
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CD2320-B11000 Datenblatt(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD2320-B1200~B11000 Surface Mount Bridge Rectifier Diode Features ■ Lead free as standard ■ RoHS compliant* ■ Low power loss & high efficiency ■ High current capability ■ Low profile package Applications ■ AC operated products ■ Computer monitors ■ Set top boxes ■ Cable modems General Information Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Notes: 1 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC. 2 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas. The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Bridge Rectifier Diodes for rectification applications, in compact chip package 2320 size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Bridge Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltages between 200 V and 1000 V. Parameter Symbol CD2320-B1200~B11000 Unit Operating Temperature Range TJ -55 to +175 °C Storage Temperature Range TSTG -55 to +175 °C CD2320- Parameter Symbol B1200 B1400 B1600 B1800 B11000 Unit Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 800 1000 V Maximum RMS Voltage VRMS 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 200 400 600 800 1000 V Maximum Average Forward Rectified Current (TA = 55 °C) I(AV) 1.0 A DC Reverse Current @ Rated DC Blocking Voltage (@TJ = 25 °C) IR 5µA DC Reverse Current @ Rated DC Blocking Voltage (@TJ = 150 °C) IR 200 µA Typical Junction Capacitance 1 CJ 25 pF Maximum Instantaneous Forward Voltage @ 1 A VF 1V Typical Thermal Resistance 2 RθJL 110 °C/W Peak forward surge current 8.3 ms single half sine-wave superimposed IFSM 30 A on rated load (JEDEC Method) |
Ähnliche Teilenummer - CD2320-B11000 |
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Ähnliche Beschreibung - CD2320-B11000 |
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