MC74VHCT157A

http://onsemi.com

3

MAXIMUM RATINGS (Note 1.)

Symbol

Parameter

Value

Unit

Positive DC Supply Voltage

–0.5 to +7.0

V

Digital Input Voltage

–0.5 to +7.0

V

DC Output Voltage

Output in 3–State

High or Low State

–0.5 to +7.0

V

Input Diode Current

–20

mA

Output Diode Current

$20

mA

DC Output Current, per Pin

$25

mA

$75

mA

Power Dissipation in Still Air

SOIC Package

TSSOP

200

180

mW

Storage Temperature Range

–65 to +150

°C

ESD Withstand Voltage

Human Body Model (Note 2.)

Machine Model (Note 3.)

Charged Device Model (Note 4.)

>2000

>200

>2000

V

Latch–Up Performance

$300

mA

Thermal Resistance, Junction to Ambient

SOIC Package

TSSOP

143

164

°C/W

1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the

Recommended Operating Conditions.

2. Tested to EIA/JESD22–A114–A

3. Tested to EIA/JESD22–A115–A

4. Tested to JESD22–C101–A

5. Tested to EIA/JESD78

RECOMMENDED OPERATING CONDITIONS

Symbol

Characteristics

Min

Max

Unit

DC Supply Voltage

4.5

5.5

V

DC Input Voltage

0

5.5

V

DC Output Voltage

Output in 3–State

High or Low State

0

V

Operating Temperature Range, all Package Types

–55

125

°C

Input Rise or Fall Time

0

20

ns/V

DEVICE JUNCTION TEMPERATURE VERSUS

TIME TO 0.1% BOND FAILURES

Junction

Temperature

°C

Time, Hours

Time, Years

80

1,032,200

117.8

90

419,300

47.9

100

178,700

20.4

110

79,600

9.4

120

37,000

4.2

130

17,800

2.0

140

8,900

1.0

1

1

10

100

1000

TIME, YEARS

FAILURE RATE OF PLASTIC = CERAMIC

UNTIL INTERMETALLICS OCCUR

Figure 4. Failure Rate vs. Time Junction Temperature