STPS80150CW

2/6

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

Reverse leakage

current

Tj = 25°C

530

µA

Tj = 125°C

620

mA

Forward voltage drop

Tj = 25

0.8

0.84

V

Tj = 125°C

0.68

0.74

Tj=25

0.9

0.96

Tj = 125°C

0.8

0.86

Pulse test : * tp = 380

µs, δ <2%

To evaluate the conduction losses use the following equation:

P=0.62xIF(AV) + 0.003 IF

2

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

0.7

0.5

°C/W

Junction to case

Coupling

0.3

°C/W

THERMAL RESISTANCES

When the diodes 1 and 2 are used simultaneously :

P

(W)

F(AV)

0

5

10

15

20

25

30

35

40

0

5

10

15

20

25

30

35

40

45

50

I

(A)

F(AV)

T

tp

δ = 1

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 1: Conduction losses versus average current

(per diode).

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(t )

P

(1µs)

ARM p

ARM

Fig. 2: Normalized avalanche power derating

versus pulse duration.

0

0.2

0.4

0.6

0.8

1

1.2

25

50

75

100

125

150

T (°C)

j

P(t )

P

(25°C)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus junction temperature.

I

(A)

F(AV)

0

5

10

15

20

25

30

35

40

45

0

25

50

75

100

125

150

175

T

(°C)

amb

T

tp

R=R

th(j-a)

th(j-c)

R

=15°C/W

th(j-a)

Fig. 4: Average forward current versus ambient

temperature (

δ=0.5, per diode).