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MC74VHCT257AM Datenblatt(PDF) 4 Page - ON Semiconductor |
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MC74VHCT257AM Datenblatt(HTML) 4 Page - ON Semiconductor |
4 / 8 page MC74VHCT257A http://onsemi.com 4 DC CHARACTERISTICS (Voltages Referenced to GND) VCC TA = 25°C TA ≤ 85°C –55 °C ≤ TA ≤ 125°C Symbol Parameter Condition (V) Min Typ Max Min Max Min Max Unit VIH Minimum High–Level Input Voltage 4.5 to 5.5 2 2 2 V VIL Maximum Low–Level Input Voltage 4.5 to 5.5 0.8 0.8 0.8 V VOH Maximum High–Level Output Voltage VIN = VIH or VIL IOH = –50 µA 4.5 3.94 3.8 3.66 V Ou u o age VIN = VIH or VIL IOH = –8 mA 4.5 3.94 3.8 3.66 VOL Maximum Low–Level Output Voltage VIN = VIH or VIL IOL = 50 µA 4.5 0 0.1 0.1 0.1 V Ou u o age VIN = VIH or VIL IOH = 8 mA 4.5 0.36 0.44 0.52 IIN Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 µA IOZ Maximum 3–State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 5.5 ±0.25 ±2.5 ±2.5 µA ICCT Maximum Quiescent Supply Current VIN = VCC or GND 5.5 4.0 40.0 40.0 µA ICC Additional Quiescent Supply Current (per pin) VIN = VCC or GND 5.5 1.35 1.5 1.5 µA IOPD Output Leakage Current VOUT = 5.5 V 0 0.5 5 5 µA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) TA = 25°C TA = ≤ 85°C –55 °C ≤ TA ≤ 125°C Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit tPLH, tPHL Maximum Propagation Delay, AorBtoY VCC = 3.3 ± 0.3V CL = 15pF CL = 50pF 5.8 8.3 9.3 12.8 1.0 1.0 11.0 14.5 1.0 1.0 11.0 14.5 ns PHL gy A or B to Y VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 3.6 5.1 5.9 7.9 1.0 1.0 7.0 9.0 1.0 1.0 7.0 9.0 tPLH, tPHL Maximum Propagation Delay, StoY VCC = 3.3 ± 0.3V CL = 15pF CL = 50pF 7.0 9.5 11.0 14.5 1.0 1.0 13.0 16.5 1.0 1.0 13.0 16.5 ns PHL gy S to Y VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 4.0 5.5 6.8 8.8 1.0 1.0 8.0 10.0 1.0 1.0 8.0 10.0 tPZL, tPZH Maximum Output Enable, Time OE to Y VCC = 3.3 ± 0.3V CL = 15pF RL = 1 kW CL = 50pF 6.7 9.2 10.5 14.0 1.0 1.0 12.5 16.0 1.0 1.0 12.5 16.0 ns PZH Time, OE to Y VCC = 5.0 ± 0.5V CL = 15pF RL = 1 kW CL = 50pF 3.6 5.1 6.8 11.0 1.0 12.0 8.0 10.0 1.0 1.0 8.0 12.0 tPLZ, tPHZ Maximum Output Disable, Time OE to Y VCC = 3.3 ± 0.3V CL = 50pF RL = 1 kW 10.5 14.0 1.0 15.0 1.0 15.0 ns PHZ Time, OE to Y VCC = 5.0 ± 0.5V CL = 50pF RL = 1 kW 9.5 12.0 1.0 13.0 1.0 13.0 CIN Maximum Input Capacitance 4 10 10 10 pF Typical @ 25 °C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 1.) 20 pF 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no–load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. |
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