BAT721S datasheet(3/8 Pages) PHILIPS

Teilenummer	BAT721S

Bauteilbeschribung	Schottky barrier double diodes

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Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

1999 May 06

3

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT721 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT23 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VR

continuous reverse voltage

−

40

V

IF

continuous forward current

−

200

mA

IFSM

non-repetitive peak forward current

tp = 8.3 ms half sinewave;

JEDEC method

−

1A

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

125

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VF

continuous forward voltage

see Fig.6

IF =10mA

−

300

mV

IF = 100 mA

−

420

mV

IF = 200 mA

−

550

mV

IR

continuous reverse current

VR = 30 V; see Fig.7

−

15

µA

VR =30V;Tj = 100 °C; see Fig.7

−

3

mA

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.8

40

50

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

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