Datenblatt-Suchmaschine für elektronische Bauteile |
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BC546 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BC546 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2004 Nov 25 3 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC546A; BC546B − 80 V BC547 − 50 V VCEO collector-emitter voltage open base BC546A; BC546B − 65 V BC547; BC547B; BC547C − 45 V VEBO emitter-base voltage open collector BC546A; BC546B − 6V BC547; BC547B; BC547C − 6V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W |
Ähnliche Teilenummer - BC546 |
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Ähnliche Beschreibung - BC546 |
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