1999 Apr 08

3

Philips Semiconductors

Product specification

NPN medium power transistors

BCP54; BCP55; BCP56

THERMAL CHARACTERISTICS

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

94

K/W

thermal resistance from junction to soldering point

13

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector cut-off current

−−

100

nA

−−

10

µA

emitter cut-off current

−−

100

nA

DC current gain

25

−−

63

−

250

25

−−

DC current gain

−

BCP55-10; 56-10

63

−

160

BCP54-16; 55-16; 56-16

100

−

250

collector-emitter saturation voltage

−−

500

mV

base-emitter voltage

−−

1V

transition frequency

−

130

−

MHz

DC current gain ratio of the

complementary pairs

−−

1.6

h

FE1

h

FE2

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