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BCP55 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BCP55 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 08 3 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 THERMAL CHARACTERISTICS Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 94 K/W Rth j-s thermal resistance from junction to soldering point 13 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V −− 100 nA IE = 0; VCB =30V; Tj = 125 °C −− 10 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 100 nA hFE DC current gain IC = 5 mA; VCE =2V 25 −− IC = 150 mA; VCE =2V 63 − 250 IC = 500 mA; VCE =2V 25 −− hFE DC current gain IC = 150 mA; VCE =2V − BCP55-10; 56-10 63 − 160 BCP54-16; 55-16; 56-16 100 − 250 VCEsat collector-emitter saturation voltage IC = 0.5 A; IB =50mA −− 500 mV VBE base-emitter voltage IC = 0.5 A; VCE =2V −− 1V fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz − 130 − MHz DC current gain ratio of the complementary pairs IC = 150 mA; VCE =2V −− 1.6 h FE1 h FE2 ----------- |
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Ähnliche Beschreibung - BCP55 |
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