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BCY79 Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer BCY79
Bauteilbeschribung  PNP switching transistors
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCY79 Datenblatt(HTML) 5 Page - NXP Semiconductors

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1997 Jun 18
5
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
F
noise figure
IC = −200 µA; VCE = −5 V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
−−
10
dB
Switching times (between 10% and 90% levels); see Fig.2
ton
turn-on time
ICon = −10 mA; IBon = −1 mA;
IBoff = 1 mA; test conditions A
−−
100
ns
td
delay time
−−
50
ns
tr
rise time
−−
50
ns
toff
turn-off time
−−
700
ns
ts
storage time
−−
600
ns
tf
fall time
−−
100
ns
ton
turn-on time
ICon = −100 mA; IBon = −10 mA;
IBoff = 10 mA; test conditions B
−−
100
ns
td
delay time
−−
35
ns
tr
rise time
−−
65
ns
toff
turn-off time
−−
400
ns
ts
storage time
−−
300
ns
tf
fall time
−−
100
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Test conditions A
Vi = −5 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns.
R1 = 56
Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3V
Oscilloscope input impedance Zi =50 Ω.
Fig.2 Test circuit for switching times.
ndbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
Test conditions B
Vi = −9.8 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns.
R1 = 62
Ω; R2 = 470 Ω; RB = 470 Ω; RC = 100 Ω.
VBB = 3.4 V; VCC = −10.8 V
Oscilloscope input impedance Zi =50 Ω.


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