1997 Jun 18

3

Philips Semiconductors

Product specification

PNP switching transistors

BCY78; BCY79

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCY78

−−32

V

BCY79

−−45

V

collector-emitter voltage

open base

BCY78

−−32

V

BCY79

−−45

V

emitter-base voltage

open collector

−5V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

peak base current

−−200

mA

total power dissipation

−

340

mW

−

1W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air

450

K/W

thermal resistance from junction to case

150

K/W