Datenblatt-Suchmaschine für elektronische Bauteile |
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BF1100WR Datenblatt(PDF) 10 Page - NXP Semiconductors |
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BF1100WR Datenblatt(HTML) 10 Page - NXP Semiconductors |
10 / 14 page 1995 Apr 25 10 Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR Fig.22 Input admittance as a function of frequency; typical values. VDS = 12 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. handbook, halfpage 10 3 MLD185 102 10 10 1 10 2 10 1 y is (mS) f (MHz) b is g is VDS = 12 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. Fig.23 Reverse transfer admittance and phase as a function of frequency; typical values. 10 3 MLD186 102 10 10 3 10 2 10 1 y rs 10 3 10 10 1 2 rs ( µS) f (MHz) rs yrs (deg) ϕ ϕ Fig.24 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 12 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. 10 3 MLD187 102 10 1 10 2 10 1 10 10 2 y fs (mS) y fs f (MHz) fs fs (deg) ϕ ϕ Fig.25 Output admittance as a function of frequency; typical values. VDS = 12 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. handbook, halfpage 10 3 MLD188 102 10 10 1 10 1 10 2 yos (mS) f (MHz) bos gos |
Ähnliche Teilenummer - BF1100WR |
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Ähnliche Beschreibung - BF1100WR |
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