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BLS2933-100 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BLS2933-100
Bauteilbeschribung  Microwave power LDMOS transistor
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
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BLS2933-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 1 August 2006
2 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
2.
Pinning information
[1]
connected to flange
3.
Ordering information
4.
Limiting values
5.
Thermal characteristics
Table 2.
Pinning
Pin
Description
Simplified outline
Symbol
1
drain
2
gate
3
source
[1]
3
2
1
sym112
1
3
2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLS2933-100
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
-
15
V
ID
drain current
-
12
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Zth(j-h)
transient thermal impedance from
junction to heatsink
Th = 25 °C;
tp = 200 µs; δ =12%
0.4
K/W


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