Datenblatt-Suchmaschine für elektronische Bauteile |
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BLS2933-100 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BLS2933-100 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 12 page BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 1 August 2006 2 of 12 Philips Semiconductors BLS2933-100 Microwave power LDMOS transistor 2. Pinning information [1] connected to flange 3. Ordering information 4. Limiting values 5. Thermal characteristics Table 2. Pinning Pin Description Simplified outline Symbol 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 Table 3. Ordering information Type number Package Name Description Version BLS2933-100 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage - 15 V ID drain current - 12 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Zth(j-h) transient thermal impedance from junction to heatsink Th = 25 °C; tp = 200 µs; δ =12% 0.4 K/W |
Ähnliche Teilenummer - BLS2933-100 |
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Ähnliche Beschreibung - BLS2933-100 |
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