Datenblatt-Suchmaschine für elektronische Bauteile |
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BU1507 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BU1507 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.8. Typical losses. P TOT = f (IB); IC = 4 A; f = 16 kHz Fig.9. Typical collector storage and fall time. ts = f (I B); tf = f (IB); IC = 4.0 A; Tj = 85˚C; f = 16 kHz Fig.10. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Tmb) Fig.11. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T 0 0.5 1 1.5 2 IB / A IC = 4 A IC = 3 A Ths = 25 C Ths = 85 C BU2507DF/DX VBEsat / V 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound BU2507AF/DF/AX/DX 0 0.5 1 1.5 2 0.1 1 IB / A Ptot / W 10 Ths = 25 C Ths = 85 C 1E-06 1E-4 10E-2 1E+00 0.001 0.01 0.1 1 10 BU2507AF/X/DF/X t / s Zth / K/W D = tp tp T T P t D D = 0 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5 2 0 2 4 6 8 10 BU2507AF/AX/Df/DX85ts/tf IB / A ts/tf/ us September 1997 4 Rev 1.200 |
Ähnliche Teilenummer - BU1507 |
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Ähnliche Beschreibung - BU1507 |
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