BU2508AX datasheet(4/7 Pages) PHILIPS

Teilenummer	BU2508AX

Bauteilbeschribung	Silicon Diffused Power Transistor

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Hersteller	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2508AX

Fig.7. Typical base-emitter saturation voltage.

V

BEsat = f (IC); parameter IC/IB

Fig.8. Typical collector-emitter saturation voltage.

V

CEsat = f (IC); parameter IC/IB

Fig.9. Typical base-emitter saturation voltage.

V

BEsat = f (IB); parameter IC

Fig.10. Typical collector-emitter saturation voltage.

V

CEsat = f (IB); parameter IC

Fig.11. Typical turn-off losses. T

j = 85˚C

Eoff = f (I

B); parameter IC; f = 16 kHz

Fig.12. Typical collector storage and fall time.

ts = f (I

B); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

0.1

1

10

IC / A

VBESAT / V

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

3

4

5

IC/IB=

0.1

1

10

IB / A

VCESAT / V

10

1

0.1

Tj = 25 C

Tj = 125 C

3A

4.5A

6A

IC=2A

0.1

1

10

IC / A

VCESAT / V

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Tj = 25 C

Tj = 125 C

5

4

3

IC/IB=

0.1

1

10

IB / A

Eoff / uJ

1000

100

10

3.5A

IC = 4.5A

0

1

2

3

4

IB / A

VBESAT / V

1.2

1.1

1

0.9

0.8

0.7

0.6

6A

4.5A

3A

2A

Tj = 25 C

Tj = 125 C

IC=

0.1

1

10

IB / A

ts, tf / us

12

11

10

9

8

7

6

5

4

3

2

1

0

IC =

3.5A

4.5A

tf

ts

November 1997

4

Rev 2.300

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