BU2508DF datasheet(5/7 Pages) PHILIPS

Teilenummer	BU2508DF

Bauteilbeschribung	Silicon Diffused Power Transistor

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Hersteller	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2508DF

Fig.13. Forward bias safe operating area. T

hs = 25˚C

I

Region of permissible DC operation.

II

Extension for repetitive pulse operation.

NB:

Mounted with heatsink compound and

30

± 5 newton force on the centre of

the envelope.

Fig.14. Forward bias safe operating area. T

hs = 25˚C

I

Region of permissible DC operation.

II

Extension for repetitive pulse operation.

NB:

Mounted without heatsink compound and

30

± 5 newton force on the centre of

the envelope.

1

10

100

1000

100

10

1

0.1

0.01

tp =

10 us

100 us

1 ms

10 ms

DC

IC / A

VCE / V

ICM max

IC max

= 0.01

II

I

Ptot max

1

10

100

1000

100

10

1

0.1

0.01

tp =

10 us

100 us

1 ms

10 ms

DC

IC / A

VCE / V

ICM max

IC max

= 0.01

II

I

Ptot max

July 1998

5

Rev 1.600

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