Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2520AX Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BU2520AX Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX Fig.7. Typical DC current gain. h FE = f (IC) parameter V CE Fig.8. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB Fig.9. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.10. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.11. Typical collector-emitter saturation voltage. V CEsat = f (IB); parameter IC Fig.12. Typical turn-off losses. T j = 85˚C Eoff = f (I B); parameter IC; parameter frequency 0.1 10 IC / A hFE 100 10 1 1 100 Tj = 25 C Tj = 125 C 5 V 1 V 0 1 2 3 4 IB / A VBESAT / V 1.2 1.1 1 0.9 0.8 0.7 0.6 Tj = 25 C Tj = 125 C IC= 8 A 6 A 5 A 4 A 0.1 1 10 IC / A VBESAT / V 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 Tj = 25 C Tj = 125 C IC/IB= 3 4 5 0.1 1 10 IB / A VCESAT / V 10 1 0.1 Tj = 25 C Tj = 125 C IC = 4 A 5 A 6 A 8 A 0.1 10 IC / A VCESAT / V 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 100 Tj = 25 C Tj = 125 C IC/IB = 4 5 3 0.1 1 10 IB / A Eoff / uJ 1000 100 10 IC = 6 A 5 A 16 kHz 32 kHz September 1997 4 Rev 2.200 |
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