Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2522A Datenblatt(PDF) 5 Page - NXP Semiconductors |
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BU2522A Datenblatt(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A Fig.15. Forward bias safe operating area. T mb = 25 ˚C I CDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Fig.16. Reverse bias safe operating area. T j ≤ Tjmax BU2520A IC / A 100 10 1 0.1 0.01 1 10 100 1000 VCE / V ICM ICDC Ptot 100 us 1 ms 10 ms DC 30 us tp = = 0.01 BU2522AF 0 30 20 10 0 500 1000 1500 VCE / V IC / A November 1995 5 Rev 1.100 |
Ähnliche Teilenummer - BU2522A |
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Ähnliche Beschreibung - BU2522A |
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