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TSHF5410 Datenblatt(PDF) 1 Page - Vishay Siliconix |
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TSHF5410 Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 6 page TSHF5410 Document Number 81303 Rev. 1.1, 26-Oct-06 Vishay Semiconductors www.vishay.com 1 94 8390 e2 High Speed Infrared Emitting Diode in T-1¾ Package Description TSHF5410 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5410 combines high speed with high radiant power at wavelength of 890 nm. Features • High modulation bandwidth • Extra high radiant power and radiant intensity • Low forward voltage • Suitable for high pulse current operation • Standard package T-1¾ ( ∅ 5 mm) • Angle of half intensity ϕ = ± 22° • Peak wavelength λ p = 890 nm • High reliability • Good spectral matching to Si photodetectors • Lead (Pb)-free component • Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared high speed remote control and free air data transmission systems with high modulation frequen- cies or high data transmission rate requirements. TSHF5410 is ideal for the design of transmission sys- tems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK - coded, 450 kHz or 1.3 MHz). Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Part Remarks TSHF5410 MOQ: 4000 pcs Parameter Test condition Symbol Value Unit Reverse Voltage VR 5V Forward Current IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge Forward Current tp = 100 µs IFSM 1.5 A Power Dissipation PV 180 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb - 40 to + 85 °C Storage Temperature Range Tstg - 40 to + 100 °C Soldering Temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C Thermal Resistance Junction/ Ambient RthJA 270 K/W |
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