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STP120NF10 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STP120NF10 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 15 page STW120NF10 - STP120NF10 - STB120NF10 Electrical characteristics 5/15 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=50V, ID= 60A, RG=4.7Ω, VGS=10V (see Figure 12) 25 90 132 68 ns ns ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 110 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 440 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=120A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, di/dt = 100A/µs, VDD=40V, Tj=150°C (see Figure 17) 152 760 10 ns nC A |
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Ähnliche Beschreibung - STP120NF10 |
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