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STP120NF10 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STP120NF10
Bauteilbeschribung  N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STW120NF10 - STP120NF10 - STB120NF10
Electrical characteristics
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Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=50V, ID= 60A,
RG=4.7Ω, VGS=10V
(see Figure 12)
25
90
132
68
ns
ns
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
110
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
440
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=120A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A,
di/dt = 100A/µs,
VDD=40V, Tj=150°C
(see Figure 17)
152
760
10
ns
nC
A


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