Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

NE321000 Datenblatt(PDF) 1 Page - California Eastern Labs

Teilenummer NE321000
Bauteilbeschribung  ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE321000 Datenblatt(HTML) 1 Page - California Eastern Labs

  NE321000 Datasheet HTML 1Page - California Eastern Labs NE321000 Datasheet HTML 2Page - California Eastern Labs NE321000 Datasheet HTML 3Page - California Eastern Labs NE321000 Datasheet HTML 4Page - California Eastern Labs NE321000 Datasheet HTML 5Page - California Eastern Labs NE321000 Datasheet HTML 6Page - California Eastern Labs  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
PART NUMBER
NE321000
PACKAGE OUTLINE
CHIP
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
0.35
0.45
GA1
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
12.0
13.5
IDSS
Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA
15
40
70
VP
Pinch-off Voltage, VDS = 2 V, ID = 100 µA
V
-0.2
-0.7
-2.0
gM
Transconductance, VDS = 2 V, ID = 10 µAmS
40
55
IGSO
Gate to Source Leakage Current, VGS = -3 V
µA
0.5
10
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
NE321000
Note:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects per
10 samples.
DESCRIPTION
NEC's NE321000 is a Hetero-Junction FET chip that utilizes
the junction between Si-doped AlGaAs and undoped InGaAs
to create high electron mobility. Its excellent low noise figure
and high associated gain make it suitable for commercial,
industrial and space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
FEATURES
• SUPER LOW NOISE FIGURE:
0.35 dB Typ at f = 12 GHz
• HIGH ASSOCIATED GAIN:
13.0 dB Typ at f = 12 GHz
• GATE LENGTH: ≤0.2 µm
• GATE WIDTH: 160 µm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Drain Current, ID (mA)
NOISE FIGURE & ASSOCIATED GAIN vs.
DRAIN CURRENT
California Eastern Laboratories
VDS = 2 V
f = 12 GHz
GA
NF
2.0
15
14
13
12
11
30
20
10
0
0.5
1.0
1.5


Ähnliche Teilenummer - NE321000

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
NEC
NE321000 NEC-NE321000 Datasheet
48Kb / 12P
   C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
logo
California Eastern Labs
NE321000 CEL-NE321000 Datasheet
141Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
Renesas Technology Corp
NE321000 RENESAS-NE321000 Datasheet
215Kb / 14P
   HETERO JUNCTION FIELDEFFECT TRANSISTOR
1999
More results

Ähnliche Beschreibung - NE321000

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
California Eastern Labs
NE24283B CEL-NE24283B Datasheet
49Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
NEC
NE32400 NEC-NE32400_98 Datasheet
55Kb / 5P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
California Eastern Labs
NE321000 CEL-NE321000 Datasheet
141Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
NEC
NE32684A NEC-NE32684A Datasheet
194Kb / 5P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
California Eastern Labs
NE24200 CEL-NE24200 Datasheet
47Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
NEC
NE32484A NEC-NE32484A_98 Datasheet
55Kb / 5P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE32984D NEC-NE32984D Datasheet
51Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE32584C NEC-NE32584C_98 Datasheet
57Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
California Eastern Labs
NE32584 CEL-NE32584 Datasheet
58Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
NEC
NE24200 NEC-NE24200_00 Datasheet
46Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
More results


Html Pages

1 2 3 4 5 6


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com