MMBD701LT3G datasheet(1/4 Pages) ONSEMI

Teilenummer	MMBD701LT3G

Bauteilbeschribung	Silicon Hot?묬arrier Diodes Schottky Barrier Diodes

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Hersteller	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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October, 2006 − Rev. 4

1

Publication Order Number:

MBD701/D

MBD701, MMBD701LT1

Preferred Device

Silicon Hot−Carrier Diodes

Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

• Very Low Capacitance − 1.0 pF @ VR = 20 V

• High Reverse Voltage − to 70 V

• Low Reverse Leakage − 200 nA (Max)

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

V

Forward Power Dissipation

@ TA = 25°C

MBD701

MMBD701LT

Derate above 25

°C

MBD701

MMBD701LT

PF

280

200

2.8

2.0

mW

mW/

°C

Operating Junction Temperature

Range

TJ

−55 to +125

°C

Storage Temperature Range

Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mAdc)

V(BR)R

70

−

V

Total Capacitance

(VR = 20 V, f = 1.0 MHz) Figure 1

CT

−

0.5

1.0

pF

Reverse Leakage

(VR = 35 V) Figure 3

IR

−

9.0

200

nAdc

Forward Voltage

(IF = 1.0 mAdc) Figure 4

VF

−

0.42

0.5

Vdc

Forward Voltage

(IF = 10 mAdc) Figure 4

VF

−

0.7

1.0

Vdc

http://onsemi.com

SOT−23 (TO−236)

CASE 318

STYLE 6

Preferred devices are recommended choices for future use

and best overall value.

1

2

3

Device

Package

Shipping†

ORDERING INFORMATION

MBD701

TO−92

1,000 Units / Box

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MBD701G

TO−92

(Pb−Free)

1,000 Units / Box

MMBD701LT1

SOT−23

3,000 / Tape & Reel

MMBD701LT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

1

5H M

G

A

= Assembly Location

Y

= Year

WW = Work Week

5H

= Device Code (SOT−23)

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING

DIAGRAMS

3

CATHODE

1

ANODE

2

CATHODE

1

ANODE

TO−92 2−Lead

CASE 182

STYLE 1

1

2

MBD

701

AYWW

G

MMBD701LT3

SOT−23

10,000/Tape & Reel

MMBD701LT3G

SOT−23

(Pb−Free)

10,000/Tape & Reel

Ähnliche Beschreibung - MMBD701LT3G

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
ON Semiconductor	MBD301	65Kb / 5P	Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes January, 2007 ??Rev. 4
ON Semiconductor	MMBD452LT1	53Kb / 3P	Dual Hot?묬arrier Diodes Schottky Barrier Diodes February, 2006 ??Rev. 3
Leshan Radio Company	MMBD301LT1	54Kb / 2P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD701	128Kb / 4P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2009 ??Rev. 5
Leshan Radio Company	LMBD301LT1	87Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
	LMBD301LT1G	110Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
	LMBD301LT1G	112Kb / 3P	Silicon Hot?밅arrier Diodes Schottky Barrier Diodes
First Silicon Co., Ltd	FDR301	209Kb / 3P	Silicon Hot?밅arrier Diodes Schottky Barrier Diodes
Leshan Radio Company	LMDL301T1G	135Kb / 3P	Silicon Hot?밅arrier Diodes Schottky Barrier Diode
ON Semiconductor	MMBD452LT1G	124Kb / 3P	Dual Hot-Carrier Diodes Schottky Barrier Diodes August, 2009 ??Rev. 4

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