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MC100E104FNG Datenblatt(PDF) 4 Page - ON Semiconductor

Teilenummer MC100E104FNG
Bauteilbeschribung  5V ECL Quint 2-Input AND/NAND Gate
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100E104FNG Datenblatt(HTML) 4 Page - ON Semiconductor

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MC10E104, MC100E104
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Table 6. 100E SERIES PECL DC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V (Note 5)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
38
46
38
46
44
53
mA
VOH
Output HIGH Voltage (Note 6)
3975
4050
4120
3975
4050
4120
3975
4050
4120
mV
VOL
Output LOW Voltage (Note 6)
3190
3295
3380
3190
3255
3380
3190
3260
3380
mV
VIH
Input HIGH Voltage
3835
3975
4120
3835
3975
4120
3835
3975
4120
mV
VIL
Input LOW Voltage
3190
3355
3525
3190
3525
3355
3190
3355
3525
mV
IIH
Input HIGH Current
200
200
200
mA
IIL
Input LOW Current
0.5
0.3
0.5
0.25
0.5
0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V.
6. Outputs are terminated through a 50
W resistor to VCC − 2.0 V.
Table 7. 100E SERIES NECL DC CHARACTERISTICS VCCx = 0 V; VEE = −5.0 V (Note 7)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
38
46
38
46
44
53
mA
VOH
Output HIGH Voltage (Note 8)
−1025
−950
−880
−1025
−950
−880
−1025
−950
−880
mV
VOL
Output LOW Voltage (Note 8)
−1810
−1705
−1620
−1810
−1745
−1620
−1810
−1740
−1620
mV
VIH
Input HIGH Voltage
−1165
−1025
−880
−1165
−1025
−880
−1165
−1025
−880
mV
VIL
Input LOW Voltage
−1810
−1645
−1475
−1810
−1645
−1475
−1810
−1645
−1475
mV
IIH
Input HIGH Current
200
200
200
mA
IIL
Input LOW Current
0.5
0.3
0.5
0.25
0.5
0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
7. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V.
8. Outputs are terminated through a 50
W resistor to VCC − 2.0 V.
Table 8. AC CHARACTERISTICS VCCx= 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 9)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fMAX
Maximum Toggle Frequency
700
700
700
MHz
tPLH
tPHL
Propagation Delay to Output
D to Q
D to F
225
500
385
725
600
1000
225
500
385
725
600
1000
225
500
385
725
600
1000
ps
tSKEW
Within-Device Skew (Note 10)
D to Q
75
75
75
ps
tJITTER
Random Clock Jitter (RMS)
< 1
< 1
< 1
ps
tr
tf
Rise/Fall Time
(20 - 80%)
Q
F
100
300
425
475
700
700
100
300
425
475
700
700
100
300
425
475
700
700
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. 10 Series: VEE can vary −0.46 V / +0.06 V.
100 Series: VEE can vary −0.46 V / +0.8 V.
10. Within-device skew is defined as identical transitions on similar paths through a device.


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