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MJ11030G Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer MJ11030G
Bauteilbeschribung  High?묬urrent Complementary Silicon Power Transistors
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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MJ11028, MJ11030, MJ11032 (NPN)
http://onsemi.com
3
ORDERING INFORMATION
Device
Package
Shipping
MJ11028
TO−204
100 Units / Tray
MJ11028G
TO−204
(Pb−Free)
MJ11029
TO−204
MJ11029G
TO−204
(Pb−Free)
MJ11030
TO−204
MJ11030G
TO−204
(Pb−Free)
MJ11032
TO−204
MJ11032G
TO−204
(Pb−Free)
MJ11033
TO−204
MJ11033G
TO−204
(Pb−Free)
100
0.2
Figure 2. DC Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.1
0.5
1
2
5
10
20
50
200
20
10
5
50
2
1
0.5
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11032, 33
100
There are two limitations on the power−handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC is
variable
depending
on
conditions.
At
high
case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
IC, COLLECTOR CURRENT (AMP)
100 k
IC, COLLECTOR CURRENT (AMP)
50 k
20 k
10 k
5 k
2 k
500
Figure 3. DC Current Gain
12
510
100
20
50
Figure 4. “On” Voltage
100
VCE = 5 V
TJ = 25°C
1 k
200
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
5
4
3
2
1
1
2
5
10
100
20
50
0
3
TJ = 25°C
IC/IB = 100
VBE(sat)
80 ms
(PULSED)
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
80 ms
(PULSED)
VCE(sat)


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