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MC100H643FNR2 Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer MC100H643FNR2
Bauteilbeschribung  Dual Supply ECL to TTL 1:8 Clock Driver
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100H643FNR2 Datenblatt(HTML) 3 Page - ON Semiconductor

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MC10H643, MC100H643
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Table 3. DC CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; VEE = −5.2 V ± 5% (10H Version);
VEE = −4.2 V to −5.5 V (100H Version))
Symbol
Characteristic
Condition
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Max
IEE
Power Supply Current
ECL
VEE Pins
42
42
42
mA
ICCL
TTL
Total all OVT
and IVT pins
106
106
106
mA
ICCH
95
95
95
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 4. 10H ECL DC CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; VEE = −5.2 V ± 5% (10H Version))
Symbol
Characteristic
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Max
IINH
IINL
Input HIGH Current
Input LOW Current
0.5
255
0.5
175
0.5
175
mA
VIH
VIL
Input HIGH Voltage
Input LOW Voltage
−1170
−1950
−840
−1480
−1130
−1950
−810
−1480
−1070
−1950
−735
−1450
mV
VBB
Output Reference Voltage
−1380
−1270
−1350
−1250
−1310
−1190
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 5. 100H ECL DC CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; VEE = −4.2 V to −5.5 V (100H))
Symbol
Characteristic
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Max
IINH
IINL
Input HIGH Current
Input LOW Current
0.5
255
0.5
175
0.5
175
mA
VIH
VIL
Input HIGH Voltage
Input LOW Voltage
−1165
−1810
−880
−1475
−1165
−1810
−880
−1475
−1165
−1810
−880
−1475
mV
VBB
Output Reference Voltage
−1380
−1260
−1380
−1260
−1380
−1260
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 6. DC TTL CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; VEE = −5.2 V ± 5% (10H Version);
VEE = −4.2 V to −5.5 V (100H Version))
Symbol
Characteristic
Condition
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Max
VOH
Output HIGH Voltage
IOH = −3.0 mA
IOH = −15 mA
2.5
2.0
2.5
2.0
2.5
2.0
V
VOL
Output LOW Voltage
IOH = 48 mA
0.5
0.5
0.5
V
IOS
Output Short Circuit Current
VOUT = 0 V
−100
−225
−100
−225
−100
−225
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.


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