Datenblatt-Suchmaschine für elektronische Bauteile |
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MMBT6521LT1 Datenblatt(PDF) 1 Page - ON Semiconductor |
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MMBT6521LT1 Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MMBT6521LT1/D MMBT6521LT1 Amplifier Transistor NPN Silicon Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 25 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 1 2 3 SOT− 23 (TO − 236) CASE 318 − 08 STYLE 6 COLLECTOR 3 1 BASE 2 EMITTER http://onsemi.com Device Package Shipping† ORDERING INFORMATION MMBT6521LT1 SOT−23 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. SOT−23 (Pb−Free) 3000/Tape & Reel MMBT6521LT1G 1 RO M G G RO = Specific Device Code M = Date Code* G = Pb−Free Package *Date Code orientation and/or overbar may vary depending upon manufacturing location. (Note: Microdot may be in either location) MARKING DIAGRAM |
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