© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 4

1

Publication Order Number:

MMBT6521LT1/D

MMBT6521LT1

Amplifier Transistor

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

25

Vdc

Collector − Base Voltage

40

Vdc

Emitter − Base Voltage

4.0

Vdc

Collector Current — Continuous

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

1

2

3

SOT− 23 (TO − 236)

CASE 318 − 08

STYLE 6

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

Device

Package

ORDERING INFORMATION

MMBT6521LT1

SOT−23

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOT−23

(Pb−Free)

3000/Tape & Reel

MMBT6521LT1G

1

RO M

G

G

RO

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

MARKING DIAGRAM