Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

MC100EPT23DR2 Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer MC100EPT23DR2
Bauteilbeschribung  3.3V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EPT23DR2 Datenblatt(HTML) 3 Page - ON Semiconductor

  MC100EPT23DR2 Datasheet HTML 1Page - ON Semiconductor MC100EPT23DR2 Datasheet HTML 2Page - ON Semiconductor MC100EPT23DR2 Datasheet HTML 3Page - ON Semiconductor MC100EPT23DR2 Datasheet HTML 4Page - ON Semiconductor MC100EPT23DR2 Datasheet HTML 5Page - ON Semiconductor MC100EPT23DR2 Datasheet HTML 6Page - ON Semiconductor MC100EPT23DR2 Datasheet HTML 7Page - ON Semiconductor MC100EPT23DR2 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
MC100EPT23
http://onsemi.com
3
Table 4. PECL DC CHARACTERISTICS VCC = 3.3 V, GND = 0 V (Note 2)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
ICCH
Power Supply Current (Outputs set to HIGH)
10
18
25
10
18
25
10
18
25
mA
ICCL
Power Supply Current (Outputs set to LOW)
15
26
36
15
26
36
15
26
36
mA
VIH
Input HIGH Voltage
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage
1355
1675
1355
1675
1355
1675
mV
VIHCMR
Input HIGH Voltage Common Mode Range
(Note 3)
1.2
3.3
1.2
3.3
1.2
3.3
V
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
D
D
−150
−150
−150
−150
−150
−150
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. All values vary 1:1 with VCC.
3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 5. LVTTL/LVCMOS OUTPUT DC CHARACTERISTICS VCC = 3.3 V, GND = 0.0 V, TA = −40°C to 85°C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOH
Output HIGH Voltage
IOH = −3.0 mA
2.4
V
VOL
Output LOW Voltage
IOL = 24 mA
0.5
V
IOS
Output Short Circuit Current
−180
−50
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V, GND = 0.0 V (Note 4)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fmax
Maximum Frequency (Figure 2)
275
350
275
350
275
350
MHz
tPLH,
tPHL
Propagation Delay to
Output Differential (Note 5)
1.2
1.2
1.5
1.5
1.8
1.8
1.2
1.1
1.5
1.5
1.8
1.8
1.3
1.1
1.7
1.5
2.4
1.8
ns
tSK+ +
tSK− −
tSKPP
Output−to−Output Skew++
Output−to−Output Skew−−
Part−to−Part Skew (Note 6)
15
35
70
60
80
500
15
40
70
70
80
500
30
40
140
125
80
500
ps
tJITTER
Random Clock Jitter (RMS) (Figure 2)
5
10
5
10
5
10
ps
VPP
Input Voltage Swing (Differential Configuration)
150
800
1200
150
800
1200
150
800
1200
mV
tr tf
Output Rise/Fall Times (0.8 V − 2.0 V)
Q, Q
330
600
900
330
600
900
330
650
900
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measured with a 750 mV 50% duty−cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3.
5. Reference (VCC = 3.3V ± 5%; GND = 0 V)
6. Skews are measured between outputs under identical conditions.


Ähnliche Teilenummer - MC100EPT23DR2

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
ON Semiconductor
MC100EPT23DR2 ONSEMI-MC100EPT23DR2 Datasheet
65Kb / 8P
   Dual Differential LVPECL to LVTTL Translator
February, 2005 ??Rev. 11
MC100EPT23DR2G ONSEMI-MC100EPT23DR2G Datasheet
65Kb / 8P
   Dual Differential LVPECL to LVTTL Translator
February, 2005 ??Rev. 11
MC100EPT23DR2G ONSEMI-MC100EPT23DR2G Datasheet
163Kb / 8P
   3.3 V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator
August, 2016 ??Rev. 19
More results

Ähnliche Beschreibung - MC100EPT23DR2

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
ON Semiconductor
MC100EPT21 ONSEMI-MC100EPT21_12 Datasheet
132Kb / 9P
   3.3V Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator
September, 2012 ??Rev. 22
MC100EPT21 ONSEMI-MC100EPT21_06 Datasheet
83Kb / 8P
   3.3V Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator
December, 2006 ??Rev. 15
MC100EPT23 ONSEMI-MC100EPT23_16 Datasheet
163Kb / 8P
   3.3 V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator
August, 2016 ??Rev. 19
logo
Texas Instruments
SN65EPT23 TI-SN65EPT23 Datasheet
254Kb / 10P
[Old version datasheet]   3.3V ECL Differential LVPECL/LVDS to LVTTL/LVCMOS Translator
SN65EPT23 TI-SN65EPT23_10 Datasheet
402Kb / 12P
[Old version datasheet]   3.3V ECL Differential LVPECL/LVDS to LVTTL/LVCMOS Translator
logo
ON Semiconductor
MC100LVELT22 ONSEMI-MC100LVELT22_16 Datasheet
150Kb / 7P
   3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator
July, 2016 ??Rev. 12
MC100LVELT22 ONSEMI-MC100LVELT22_07 Datasheet
80Kb / 7P
   3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator
March, 2007 ??Rev. 5
logo
Fairchild Semiconductor
100LVELT22 FAIRCHILD-100LVELT22 Datasheet
119Kb / 5P
   3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator
logo
ON Semiconductor
MC100LVELT20 ONSEMI-MC100LVELT20 Datasheet
49Kb / 6P
   3.3V LVTTL/LVCMOS to Differential LVPECL Translator
September, 2004 ??Rev. P1
logo
Micrel Semiconductor
SY89321L MICREL-SY89321L_08 Datasheet
48Kb / 5P
   3.3V DIFFERENTIAL LVPECL/CML/LVDS-to-LVTTL
More results


Html Pages

1 2 3 4 5 6 7 8


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com