Datenblatt-Suchmaschine für elektronische Bauteile |
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UMZ1NT1 Datenblatt(PDF) 2 Page - ON Semiconductor |
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UMZ1NT1 Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 5 page UMZ1NT1 http://onsemi.com 2 Q1: NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 7.0 − − Vdc Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − − 0.1 mAdc Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − − − − 0.1 2.0 1.0 mAdc mAdc mAdc DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE 200 − 400 − Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) 0.15 − 0.25 Vdc Transistor Frequency fT − 114 − MHz 3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Q2: PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO −7.0 − − Vdc Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − − −0.1 mAdc Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − − − − −0.1 −2.0 −1.0 mAdc mAdc mAdc DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE −200 − −400 − Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) −0.15 − −0.3 Vdc Transistor Frequency fT − 142 − MHz |
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