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FDY4001CZ Datenblatt(Datasheet) 4 Page - Fairchild Semiconductor

Teile-Nr. FDY4001CZ
Beschreibung  Complementary N & P-Channel PowerTrench MOSFET
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 4 page
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Figure 1. On-Region Characteristics
0
0.2
0.4
0.6
0.8
1
0
0.25
0.5
0.75
1
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5V
2.0V
VGS = 4.5V
3.0V
3.5V
1.5V
1.8V
.
Figure 2. Normalized on-Resistance vs. Drain
Current and Gate Voltage
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
VGS = 1.8V
2.5V
3.5V
4.5V
3.0V
2.0V
.
Figure 3. Normalized on-Resistance vs.
Temperature
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
ID = 200mA
VGS = 4.5V
.
Figure 4. On-Resistance vs. Gate-to-Source
Votlage
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
12
34
5
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 100mA
TA = 125
oC
TA = 25
oC
.
Figure 5. Transfer Characteristics
0
0.3
0.6
0.9
1.2
1.5
0.511.522.53
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
oC
25
oC
125
oC
VDS = 5V
.
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current and Temperature
0.0001
0.001
0.01
0.1
1
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA= 125
oC
25
oC
-55
oC
VGS = 0V
.
FDY4001CZ Rev. B
www.fairchildsemi.com
4
Typical Characteristics Q1 (N-Channel)




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