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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FDY4001CZ Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDY4001CZ Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  FDY4001CZ Rev. B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unlessotherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Volt- age ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V Q1 Q2 20 -20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 14 -15 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 16V, VDS =0V VDS = -16V, VDS =0V Q1 Q2 1 -3 µA IGSS Gate-Body Leakage VGS = ±12V, VDS = 0V VGS = ±4.5V, VDS = 0V VGS = ±8V, VDS = 0V Q1 Q1 Q2 ±10 ±1 ±10 µA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Q1 Q2 0.6 -0.65 -1.0 1.5 -1.5 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 2.8 -3 mV/°C rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 175mA VGS = 1.8V, ID = 150mA VGS = 1.5V, ID = 20mA VGS = 4.5V, ID = 200mA,TJ = 125°C Q1 5 7 9 10 7 Ω VGS = -4.5V, ID = --150mA VGS = -2.5V, ID = -125mA VGS = -1.8V, ID = -100mA VGS = -1.5V, ID = -30mA VGS = -4.5V, ID = -150mA,TJ =125°C Q2 8 12 15 20 12 gFS Forward Transconductance VDS = 5V, ID = 200mA VDS = -5V, ID = -150mA Q1 Q2 1.1 0.7 S (note 2) Dynamic Characteristics Ciss Input Capacitance Q1 VDS = 10V, VGS = 0V, f = 1MHz Q2 VDS = -10V, VGS = 0V, f = 1MHz Q1 Q2 60 100 pF Coss Output Capacitance Q1 Q2 20 30 pF Crss Reverse Transfer Capacitance Q1 Q2 10 15 pF Switching Characteristics td(on) Turn-On Delay Time Q1 VDD= 10V, ID = 1A, VGS= 4.5V, Rg = 6Ω Q2 VDD= -10V, ID = -0.5A, VGS= -4.5V, Rg = 6Ω Q1 Q2 6 6 12 12 ns tr Rise Time Q1 Q2 8 13 16 23 ns td(off) Turn-Off Delay Time Q1 Q2 8 8 16 16 ns tf Fall Time Q1 Q2 2.4 1 4.8 2 ns Qg Total Gate Charge Q1 VDS= 10V, ID = 200mA, VGS= 4.5V Q2 VDS= -10V, ID = -150mA, VGS= -4.5V Q1 Q2 0.8 1.0 1.1 1.4 nC Qgs Gate to Source Gate Charge Q1 Q2 0.16 0.2 nC Qgd Gate to Drain “Miller”Charge Q1 Q2 0.26 0.3 nC |
Ähnliche Teilenummer - FDY4001CZ |
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Ähnliche Beschreibung - FDY4001CZ |
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