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1PS193 Datenblatt(PDF) 3 Page - NXP Semiconductors

Teilenummer 1PS193
Bauteilbeschribung  High-speed diode
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

1PS193 Datenblatt(HTML) 3 Page - NXP Semiconductors

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1996 Sep 11
3
Philips Semiconductors
Product specification
High-speed diode
1PS193
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
see Fig.3
IF =1mA
610
mV
IF =10mA
740
mV
IF =50mA
1.0
V
IF = 100 mA
1.2
V
IR
reverse current
see Fig.4
VR =25V
30
nA
VR =80V
0.5
µA
VR =25V; Tj = 150 °C
30
µA
VR =80V; Tj = 150 °C;
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.5
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.6
4ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tp = 20 ns; see Fig.7
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
250
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W


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