KMZ11B1 datasheet(4/8 Pages) PHILIPS

Teilenummer	KMZ11B1

Bauteilbeschribung	Magnetic field sensor

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Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 8 page

1996 Dec 11

4

Philips Semiconductors

Preliminary speciﬁcation

Magnetic ﬁeld sensor

KMZ11B1

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tamb =25 °C; Hx = 3 kA/m, note 1; VCC = 5 V unless otherwise speciﬁed.

Note

1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field

Hx = 3 kA/m.

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

155

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCC

bridge supply voltage

−

5

−

V

Hy

magnetic ﬁeld strength

−2

−+2

kA/m

S

sensitivity

open circuit

3.2

−

4.8

TCVO

temperature coefﬁcient of

output voltage

VCC =5V;

Tamb = −25 to +125 °C

−−0.4

−

%/K

ICC = 3 mA;

Tamb = −25 to +125 °C

−−0.1

−

%/K

Rbridge

bridge resistance

1.9

−

2.9

k

Ω

TCRbridge

temperature coefﬁcient of

bridge resistance

Tbridge = −25 to +125 °C

−

0.3

−

%/K

Voffset

offset voltage

−1.5

−

+1.5

mV/V

TCVoffset

offset voltage drift

Tbridge = −25 to +125 °C

−3

−+3

FL

linearity deviation of output

voltage

Hy =0to ±1 kA/m

−−±0.5

%

⋅FS

Hy =0to ±1.6 kA/m

−−±1.7

%

⋅FS

Hy =0to ±2 kA/m

−−±4%⋅FS

FH

hysteresis of output voltage

−−

1%

⋅FS

f

operating frequency

0

−

1

MHz

mV V

⁄

kA m

⁄

-----------------

µVV

⁄

K

---------------

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