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FDD5614P Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FDD5614P Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page FDD5614P Rev C1(W) Typical Characteristics 0 3 6 9 12 15 01 2345 -VDS, DRAIN-SOURCE VOLTAGE (V) -3.0V -2.5V -4.0V -4.5V VGS = -10V -3.5V -6.0V 0.8 1 1.2 1.4 1.6 1.8 02468 10 -ID, DRAIN CURRENT (A) VGS = -3.5V -4.5V -5.0V -4.0V -10V -6.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( oC) ID = -4.5A VGS = -10V 0 0.1 0.2 0.3 0.4 246 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -2.3 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 3 6 9 12 15 123 45 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 125 oC VDS = -5V 25 oC 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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Ähnliche Beschreibung - FDD5614P |
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