Datenblatt-Suchmaschine für elektronische Bauteile |
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KSD526 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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KSD526 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSD526 Rev. A1 April 2006 KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 1.Base 2.Collector 3.Emitter 1 TO-220 Absolute Maximum Ratings * T a = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.4 A PC Collector Dissipation ( TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Electrical Characteristics T C = 25°C unless otherwise noted Symbol Parameter Test Condition MIN MAX MAX Units ICBO Collector Cut-off Current VCB = 80V, IE = 0 30 μA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 μA BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 V hFE DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A 40 15 50 240 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.45 1.5 V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 3A 1 1.5 V fT Current Gain - Bandwidth Product VCE = 5V, IC = 0.5A 3 8 MHz Ccb Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz 90 pF hFE Classification Classification R O Y hFE 40∼80 70∼140 120∼240 |
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Ähnliche Beschreibung - KSD526 |
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