Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFPS35N50LPBF Datenblatt(PDF) 4 Page - International Rectifier |
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IRFPS35N50LPBF Datenblatt(HTML) 4 Page - International Rectifier |
4 / 8 page IRFPS35N50LPbF 4 www.irf.com Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Typical Source-Drain Diode Forward Voltage 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds+ Cgd Fig 6. Typ. Output Capacitance Stored Energy vs. VDS Fig 7. Typical Gate Charge Vs. Gate-to-Source Voltage 0 40 80 120 160 200 240 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 34A V = 100V DS V = 250V DS V = 400V DS 0 100 200 300 400 500 600 VDS, Drain-to-Source Voltage (V) 0 5 10 15 20 25 30 |
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