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BTA316-800C Datenblatt(PDF) 7 Page - NXP Semiconductors

Teilenummer BTA316-800C
Bauteilbeschribung  16 A Three-quadrant triacs high commutation
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BTA316-800C Datenblatt(HTML) 7 Page - NXP Semiconductors

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BTA316_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 11 April 2007
7 of 12
NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
7.
Dynamic characteristics
Table 6.
Dynamic characteristics
Symbol Parameter
Conditions
BTA316-600B
BTA316-800B
BTA316-600C
BTA316-800C
Unit
Min
Typ
Max
Min
Typ
Max
dVD/dt
rate of rise of
off-state
voltage
VDM = 0.67 × VDRM(max); Tj = 125 °C;
exponential waveform; gate open circuit
1000
-
-
500
-
-
V/
µs
dIcom/dt rate of change
of
commutating
current
VDM = 400 V; Tj = 125 °C; IT(RMS) =16A;
without snubber; gate open circuit
20
-
-
15
-
-
A/ms
tgt
gate-controlled
turn-on time
ITM = 20 A; VD =VDRM(max); IG = 0.1 A;
dIG/dt=5A/µs
-2
-
-
2
-
µs
(1) T2
− G−
(2) T2+ G
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function of
junction temperature
Fig 8.
Normalized gate trigger current as a function of
junction temperature
Tj (°C)
−50
150
100
050
001aab101
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
Tj (°C)
−50
150
100
050
001aac669
1
2
3
0
(1)
(2)
(3)
IGT
IGT(25°C)


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